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absolute maximum ratings (per die) parameter units i d @ v gs = 12v, t c = 25c continuous drain current 3.0 i d @ v gs = 12v, t c = 100c continuous drain current 1.9 i dm pulsed drain current 12 p d @ t c = 25c max. power dissipation 12 w linear derating factor 0.1 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 85 mj i ar avalanche current 3.0 a e ar repetitive avalanche energy 1.2 mj dv/dt peak d iode recovery dv/dt 3.0 v/ns t j operating junction -55 to 150 t stg storage temperature range c pckg. mounting surface temp. 300 (for 5s) weight 0.89 (typical) g pre-irradiation international rectifiers rad-hard tm hexfet ? mosfet technology provides high performance power mosfetsfor space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dcto dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. a radiation hardened power mosfet surface mount (lcc-28) www.irf.com 1 features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount for footnotes refer to the last page lcc-28 light weight product summary part number radiation level r ds(on) i d irhq7110 100k rads (si) 0.6 ? 3.0a irhq3110 300k rads (si) 0.6 ? 3.0a irhq4110 600k rads (si) 0.6 ? 3.0a irhq8110 1000k rads (si) 0.75 ? 3.0a irhq7110 100v, quad n-channel rad-hard ? hexfet ? mosfet technology pd-93785b downloaded from: http:///
irhq7110 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units t est conditions i s continuous source current (body diode) 3.0 i sm pulse source current (body diode) 12 v sd diode forward voltage 1.2 v t j = 25c, i s = 3.0a, v gs = 0v t rr reverse recovery time 173 ns t j = 25c, i f = 3.0a, di/dt 100a/ s q rr reverse recovery charge 863 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance (per die) parameter min typ max units t est conditions r thjc junction-to-case 10.4 electrical characteristics @ tj = 25c (unless otherwise specified) (per die) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.11 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.60 v gs = 12v, i d = 1.9a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 1.4 s v ds = 15v, i ds = 1.9a i dss zero gate voltage drain current 25 v ds = 80v, v gs =0v 250 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 11 v gs = 12v, i d = 3.0a q gs gate-to-source charge 4.0 nc v ds = 50v q gd gate-to-drain (miller) charge 5.5 t d (on) turn-on delay time 20 v dd = 50v, i d = 3.0a, t r rise time 25 v gs = 12v, r g = ? t d (off) turn-off delay time 40 t f fall time 40 l s + l d total inductance 6.1 c iss input capacitance 270 v gs = 0v, v ds = 25v c oss output capacitance 110 p f f = 1.0mhz c rss reverse transfer capacitance 23 na nh ns a measured from the center of drain pad to center of source pad c/w ? note: corresponding spice and saber models are available international rectifier website. downloaded from: http:///
www.irf.com 3 irhq7110 table 1. electrical characteristics @ tj = 25c, post total dose irradiation (per die) parameter 100k rads(si) 1 300k to 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 25 a v ds = 80v, v gs =0v r ds(on) static drain-to-source 0.556 0.706 ? v gs = 12v, i d = 1.9a on-state resistance (to-3) r ds(on) static drain-to-source 0.60 0.75 ? v gs = 12v, i d = 1.9a on-state resistance (lcc-28) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. 1. part numbers irhq7110, irhq3110, irhq41102. part number irhq8110 fig a. single event effect, safe operating area v sd diode forward voltage 1.2 1.2 v v gs = 0v, i s = 3.0a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page radiation characteristics table 2. single event effect safe operating area (per die) ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28.0 285 43.0 100 100 100 100 70 br 36.8 305 39.0 100 80 70 50 i 59.8 343 32.6 50 40 35 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 vgs vds cu br i downloaded from: http:///
irhq7110 pre-irradiation 4 www.irf.com

0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 5 7 9 11 13 15 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 3.0a downloaded from: http:///
www.irf.com 5 irhq7110

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1 10 100 0 100 200 300 400 500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 2 4 6 8 10 12 14 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 3.7a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j pre-irradiation 0.1 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 3.0a downloaded from: http:///
irhq7110 pre-irradiation 6 www.irf.com $

v ds 90%10% v gs t d(on) t r t d(off) t f $
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25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 irhq7110 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v pre-irradiation 25 50 75 100 125 150 0 50 100 150 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.3a 1.9a 3.0a downloaded from: http:///
irhq7110 pre-irradiation 8 www.irf.com total dose irradiation with v gs bias. 12volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a total dose irradiation with v ds bias. 80volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l =18.7mh, peak i l = 3.0a, v gs = 12v i sd 3.0a, di/dt 165a/ s, v dd 100v, t j 150c pulse width 300 s; duty cycle 2% footnotes: case outline and dimensions lcc-28 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2011 downloaded from: http:///

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